1/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.a 4v drive pch mosfet RRH075P03 ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application switching ? packaging specifications ? inner circuit package code taping basic ordering unit (pieces) RRH075P03 tb 2500 type ? absolute maximum ratings (ta = 25 ? c) ? 30 20 7.5 30 ? 1.6 ? 30 2.0 150 ? 55 to + 150 v dss v gss p d tch v v a w c i d i dp a i s i sp a a tstg c symbol limits unit parameter drain-source voltage range of storage temperature channel temperature total power dissipation source current (body diode) drain current gate-source voltage pulsed continuous pulsed continuous ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board. ? 1 ? 1 ? 2 ? thermal resistance rth (ch-a) 62.5 c / w symbol limits unit parameter channel to ambient ? mounted on a ceramic board. ? (1) source (2) source (3) source (4) gate (5) drain (6 )drain (7) drain (8) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (8) (7) (6) (5) (1) (2) (3) (4) each lead has same dimensions sop8
2/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.a data sheet RRH075P03 ? electrical characteristics (ta = 25 ? c) a pf m s v a v pf pf ns ns ns ns nc nc nc v gs = 0v f = 1mhz v ds =? 10v v gs =? 10v i d =? 4a, v dd ? 15v r l = 3.8 r g = 10 i d =? 7.5a, v gs =? 10v i d =? 4a, v gs =? 4.5v i d =? 4a, v gs =? 4.0v i d =? 7.5a, v ds =? 10v i d =? 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds =? 30v, v gs = 0v v ds =? 10v, i d =? 1ma parameter test conditions unit min. typ. i gss i dss l y fs l c iss symbol c oss c rss t r t f q gd q gs q g v (br)dss v gs (th) r ds (on) ? ? ? ? ? ? ? ? ? t d (on) t d (off) ? pulsed static drain-source on-state resistance gate-drain charge gate-source charge total gate charge fall time turn-off delay time rise time turn-on delay time reverse transfer capacitance output capacitance input capacitance forward transfer admittance gate threshold voltage zero gate voltage drain current drain-source breakdown voltage gate-source leakage ?? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 30 15 22 25 1900 250 250 14 25 100 70 21 5 7 ? 1.0 9 max. ? ? ? ? ? ? ? ? ? ? ? 21 31 35 10 ? 1 ? 2.5 ? r l = 2.0 r g = 10 i d = ? 7.5a, v dd ? 15v v gs =? 5v ? body diode characteristics (source-drain) (ta = 25 ? c) parameter test conditions v unit ?? min. typ. ? 1.2 max. i s =? 7.5a, v gs = 0v v sd symbol ? pulsed forward voltage ?
3/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.a data sheet RRH075P03 ? electrical characteristics curves 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 drain-source voltage -v ds [v] drain current -i d [a] ta=25 pulsed v gs = - 10v v gs = - 4.5v v gs = - 4.0v v gs = - 3.0v v gs = - 2.5v v gs = - 2.2v 0.01 0.1 1 10 100 1.0 1.5 2.0 2.5 3.0 gate-source voltage : -v gs [v] drain current : -i d [a] v ds =-10v pulsed ta=125 ta=75 ta=25 ta= -25 1 10 100 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance r ds (on) [m ? ] ta=25 pulsed v gs =-4.0v v gs =-4.5v v gs =-10v 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 source-drain voltage : -v sd [v] reverse drain current : -is [a] v gs =0v pulsed ta=125 ta=75 ta=25 ta=-25 0 2 4 6 8 10 12 14 0246810 drain-source voltage -v ds [v] drain current -i d [a] v gs =-2.2v v gs =-2.5v ta=25 pulsed v gs =-10v v gs =-4.5v v gs =-3.5v v gs =-3.0v 1 10 100 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance r ds (on) [m ? ] v gs = -4.5v pulsed ta=125 ta=75 ta=25 ta= -25 ? ] v gs = -10v pulsed ta=125 ta=75 ta=25 ta= -25 0 1 10 100 0.1 1 10 drain current : -i d [a] forward transfer admittance : |yfs| [s] v ds =-10v pulsed ta= -25 ta= 125 ta= 25 ta= 75 1 10 100 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance r ds (on) [m ? ] v gs = -4.0v pulsed ta=125 ta= -25 ta= 75 ta= 25 fig.1 typical output characteristics() fig.2 typical output cha racteristics() fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. dr ain current() fig.5 static drain-source on-state resistance vs. drain current() fig.6 static drain-source on-state resistance vs. dr ain current() fig.7 static drain-source on-state resistance vs. dr ain current() fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current
4/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.a data sheet RRH075P03 0 50 100 0 5 10 15 gate-source voltage : -v gs [v] static drain-source on-stat e resistance r ds(on) [m ? ] t a =25 pulsed i d =-4.0a i d =-7.5a 0 1 2 3 4 5 6 7 8 9 10 0 10203040 total gate charge : qg [nc] gate-source voltage : -v gs [v] ta=25 v dd =-15v i d =-7.5a r g =10 ? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 drain-source voltage : -v ds [v] capacitance : c [pf] ciss coss crss ta=25 f=1mhz v gs =0v 0.01 0.1 1 10 100 1000 0.1 1 10 100 drain source voltage : - v ds ( v ) drain current : -i d (a) p w = 10ms ta = 25 single pulse mounted on ceramic board dc operation operation in this area is limited by r ds(on) (v gs =-10v) p w =100us p w =1ms 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 pulse width : pw(s) normarized transient thermal resistance : r (t) ta = 25 single pulse : 1unit rth ch-a t = t rth ch-a rth ch-a = 62.5 /w 1 10 100 1000 10000 0.01 0.1 1 10 drain current : -i d [a] switching time : t [ns] tr tf td(on) td(off) ta=25 v dd = -15v v gs =-10v r g =10 ? pulsed fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.11 switchingcharacteristics fig.14 maximum safe operating aera fig.15 normalized transient thermal resistance vs. pulse width
5/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.a data sheet RRH075P03 ? measurement circuit fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd
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